Dataset for TiN Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium (TDMAT) and Titanium Tetrachloride (TiCl4) Precursor
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چکیده
منابع مشابه
Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor
Highly uniform, smooth, and conformal coatings of tungsten nitride were synthesized by atomic layer deposition (ALD) from vapors of a novel precursor, bis(tert-butylimido)-bis(dimethylamido)tungsten, (BuN)2(Me2N)2W, and ammonia at low substrate temperatures (250-350 °C). This tungsten precursor is a low-viscosity, noncorrosive liquid with sufficient volatility at room temperature to be a vapor ...
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22 Abstract 23 24 Surface chemistry and film growth were examined during titanium nitride (TiN) atomic layer deposition (ALD) using sequential 25 exposures of tetrakis-dimethylamino titanium (TDMAT) and NH . This ALD system is shown to be far from ideal and illustrates 3 26 many potential problems that may affect ALD processing. These studies were performed using in situ Fourier transform infra...
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ژورنال
عنوان ژورنال: Data in Brief
سال: 2020
ISSN: 2352-3409
DOI: 10.1016/j.dib.2020.105777